* SPICE model NPN bipolar transistor ***BC337-25***
* Use the symbol file ***bc337-25.asy***
*
* (c) Diotec Semiconductor AG
* www.diotec.com
* 2017-12-13
*
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* This model is for simulation purposes only. It does   *
* not replace reviewing of the data sheet nor real life *
* testing of the part inside the application.           *
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*
.subckt BC337-25  C  B  E  params: Vceo=45 Vcbo=50 Vebo=5 Ic=800m hfe=400 Ices=2n Vbe=1200m ft=100Meg Ccbo=3.5p Cebo=9p Rc=1 Rb=.1 Re=.1 Eg=1.11 Xti=3

* Above values are an example for the ***BC337-25***. Using the
* above symbol file allows for direct insertion of other values
* according to these data sheet parameters:
*
* Vceo    	Collector Emitter voltage, Base open
* Vcbo		Collector Base voltage, Emitter open
* Vebo    	Emitter Base voltage, Collector open
* Ic		DC Collector current
* hfe		Max DC current gain
* Ices		Collector Emitter cut-off current
* Vbe		Min Base Emitter voltage
* ft		Gain bandwidth product
* Ccbo		Typ. Collector Base capacitance
* Cebo		Typ. Emitter Base capacitance
* Rc/Rb/Re	Fixed values
*
* Activation energy: Eg=1.11 for Si (npn) transistor
* Sat.-current temp. exp: Xti=3 for Si (npn) transistor

* Added for ngspice compatibility:
.param pi=3.14159

Q  C B E  Transistor

.model Transistor NPN(Is={Ices/2} Bf={hfe} Bvcbo={Vcbo} Bvbe={-Vebo} Vceo={Vceo} Vje={Vbe} Tf={1/(2*pi*ft)} Eg={Eg} Xti={Xti} Icrating={Ic} Cjc={Ccbo*2} Cje={Cebo*2} Rc={Rc} Rb={Rb} Re={Re} mfg=Diotec type=npn)

.ends