* .SUBCKT BS250P 3 4 5 * D G S M1 3 2 5 5 MBS250 RG 4 2 160 RL 3 5 1.2E8 C1 2 5 47E-12 C2 3 2 10E-12 D1 3 5 DBS250 * .MODEL MBS250 PMOS VTO=-3.193 RS=2.041 RD=0.697 IS=1E-15 KP=0.277 +CBD=105E-12 PB=1 LAMBDA=1.2E-2 .MODEL DBS250 D IS=2E-13 RS=0.309 .ENDS BS250P * * *ZETEX 2N7000 Spice model Last revision 3/5/00 * .SUBCKT 2N7000_ZX 3 4 5 * Nodes D G S M1 3 2 5 5 MOD1 RG 4 2 343 RL 3 5 6E6 C1 2 5 23.5P C2 3 2 4.5P D1 5 3 DIODE1 * .MODEL MOD1 NMOS VTO=2.474 RS=1.68 RD=0.0 IS=1E-15 KP=0.296 +CBD=53.5P PB=1 LAMBDA=267E-6 .MODEL DIODE1 D IS=1.254E-13 N=1.0207 RS=0.222 .ENDS 2N7000_ZX * .model Q2SC2240 NPN(Is=1.41f Xti=3 Eg=1.11 Vaf=100 Bf=310 Ne=1.5 Ise=0 + Ikf=70m Xtb=1.5 Br=.8893 Nc=2 Isc=0 Ikr=0 Rc=30 Cjc=6.878p + Mjc=.2725 Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n + Tf=1.276n Itf=0 Vtf=0 Xtf=0) * TOSHIBA 90-01-29 creation ********** *SRC=2SA970;QSA970;BJTs PNP;Amplifier;120 V .1A .MODEL QSA970 PNP (IS=10.1F NF=1 BF=426 VAF=197 IKF=60M ISE=2.38P NE=2 + BR=4 NR=1 VAR=20 IKR=90M RE=13.1 RB=52.6 RC=5.26 XTB=1.5 + CJE=38.6P VJE=1.1 MJE=.5 CJC=12.4P VJC=.3 MJC=.3 TF=1.59N TR=1.1U) * 120 Volt .1 Amp 100 MHz SiPNP Transistor 07-28-1995 *QSA970, TOSHIBA ********** .SUBCKT IRF610_IR 1 2 3 ************************************** * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * ************************************** * Model generated on Oct 29, 97 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model (Version 1.0) * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM: * The voltage-dependent capacitances are * not included. Other default values are: * RS=0 RD=0 LD=0 CBD=0 CBS=0 CGBO=0 .MODEL MM NMOS LEVEL=1 IS=1e-32 +VTO=3.94473 LAMBDA=0.00953957 KP=0.484056 +CGSO=1.26059e-06 CGDO=1.00178e-11 RS 8 3 0.0001 D1 3 1 MD .MODEL MD D IS=1.6866e-09 RS=0.0538695 N=1.49978 BV=200 +IBV=0.00025 EG=1.2 XTI=4 TT=0 +CJO=1.59879e-10 VJ=2.42435 M=0.605977 FC=0.5 RDS 3 1 1e+06 RD 9 1 1.14151 RG 2 7 5.34748 D2 4 5 MD1 * Default values used in MD1: * RS=0 EG=1.11 XTI=3.0 TT=0 * BV=infinite IBV=1mA .MODEL MD1 D IS=1e-32 N=50 +CJO=2.10468e-10 VJ=1.4522 M=0.87562 FC=1e-08 D3 0 5 MD2 * Default values used in MD2: * EG=1.11 XTI=3.0 TT=0 CJO=0 * BV=infinite IBV=1mA .MODEL MD2 D IS=1e-10 N=0.4 RS=3e-06 RL 5 10 1 FI2 7 9 VFI2 -1 VFI2 4 0 0 EV16 10 0 9 7 1 CAP 11 10 4.00016e-10 FI1 7 9 VFI1 -1 VFI1 11 6 0 RCAP 6 10 1 D4 0 6 MD3 * Default values used in MD3: * EG=1.11 XTI=3.0 TT=0 CJO=0 * RS=0 BV=infinite IBV=1mA .MODEL MD3 D IS=1e-10 N=0.4 .ENDS IRF610_IR ********** *SRC=IRF9610S;IRF9610S;MOSFETs P;Power >100V;200V 2A 3ohm *SYM=POWMOSP *PINOUT SMD-220 .SUBCKT IRF9610S 10 20 40 * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 1.42 RS 30 3 76M RG 20 2 83.3 CGS 2 3 155P EGD 12 0 1 2 1 VFB 14 0 0 FFB 1 2 VFB 1 CGD 13 14 193P R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 10 3 DSUB LS 30 40 7.5N .MODEL DMOS PMOS (LEVEL=3 VMAX=417K THETA=58.1M ETA=2M VTO=-3.1 KP=0.865) .MODEL DCGD D (CJO=193P VJ=0.6 M=0.68) .MODEL DSUB D (IS=7.47N N=1.5 RS=2.81 BV=200 CJO=151P VJ=0.8 M=0.42 TT=240N) .MODEL DLIM D (IS=100U) .ENDS ********** * GENERIC FUNCTIONAL EQUIVALENT = 1N5245 * MANUFACTURER = SPRAGUE * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A TEMPERATURE TRACKING MODEL CONSTRUCTED FROM MEASUREMENTS * THE MODEL IS INTENDED FOR USE FROM -55 C TO 125 C. NO RADIATION EFFECTS * ARE INCLUDED. SIMULATIONS USING THIS MODEL REPRESENT THE RESPONSES OF * NOMINAL DEVICES AND SIMULATIONS ARE ACCURATE WITHIN THE LIMITS OF THE * PRODUCT SPECIFICATION. *** CAUTION: THE SIMULATED TRR RANGES FROM 73 TO 96% OF THE MEASURED TRR. * THIS COULD POTENTIALLY LEAD TO ERRORS IN CIRCUIT. SIMULATIONS IF * USED IN HIGH SPEED SWITCHING APPLICATIONS. .SUBCKT D1N5245/TEMP 1 3 D1 1 3 DFOR D2 3 2 DBLOCK D3 3 1 DLEAK IC 1 2 1.46 RC 2 1 10 TC = 7.62E-04 , -3.77E-08 * .MODEL DBLOCK D( + IS = 1E-12 + RS = 0 + N = 0.6 + TT = 0 + CJO = 0 + VJ = 1 + M = .5 + EG = .1 + XTI = -3.86 + KF = 0 + AF = 1 + FC = .5 + BV = 9.9999E+13 + IBV = .001 + ) * .MODEL DLEAK D( + IS = 5.000E-15 + RS = 0 + N = 43 + TT = 0 + CJO = 0 + VJ = 1 + M = .5 + EG = 10.1202914 + XTI = 654 + KF = 0 + AF = 1 + FC = .5 + BV = 9.9999E+13 + IBV = .001 + ) * .MODEL DFOR D ( + IS = 1.649357E-15 + RS = 0.405147 + N = 1.027365 + TT = 2.54E-7 + CJO = 1.478778E-10 + VJ = 0.4204929 + M = 0.3186104 + EG = 1.11 + XTI = 3 + KF = 0 + AF = 1 + FC = 0.5 + BV = 9.9999E+13 + IBV = .001 + ) .ENDS * .model D1N5248 D(Is=7.021f Rs=5.619 Ikf=0 N=1 Xti=3 Eg=1.11 Cjo=60p M=.4093 + Vj=.75 Fc=.5 Isr=1.461n Nr=2 Bv=18 Ibv=23.333m Nbv=1.2074 + Ibvl=215.7u Nbvl=.71348 Tbv1=888.89u) * Motorola pid=1N5248 case=DO-35 * 89-9-18 gjg * Vz = 18 @ 7mA, Zz = 37 @ 1mA, Zz = 11 @ 5mA, Zz = 7.9 @ 20mA * GENERIC FUNCTIONAL EQUIVALENT = 1N5248 * TYPE: DIODE * SUBTYPE: VOLTAGE REG GP * THIS IS A TEMPERATURE TRACKING MODEL WHICH WAS CONSTRUCTED * FROM PRODUCT SPECIFICATION LIMITS AND PREVIOUSLY EXTRACTED MODELS. * THE MODEL IS INTENDED FOR USE FROM -55 C TO 125 C. NO RADIATION EFFECTS * ARE INCLUDED. SIMULATIONS USING THIS MODEL REPRESENT THE RESPONSES OF * NOMINAL DEVICES AND SIMULATIONS ARE ACCURATE WITHIN THE LIMITS OF THE * PRODUCT SPECIFICATION. * *** CAUTION: THE SIMULATED TRR RANGES FROM 28 TO 38% OF THE MEASURED TRR. * THIS COULD POTENTIALLY LEAD TO ERRORS IN CIRCUIT. SIMULATIONS IF * USED IN HIGH SPEED SWITCHING APPLICATIONS. .SUBCKT D1N5248/TEMP 1 3 D1 1 3 DFOR D2 3 2 DBLOCK D3 3 1 DLEAK IC 1 2 1.76 RC 2 1 10 TC = 7.93E-04 , -3.14E-08 * .MODEL DBLOCK D( + IS = 1E-12 + RS = 0 + N = 0.716 + TT = 0 + CJO = 0 + VJ = 1 + M = .5 + EG = .1 + XTI = -3.86 + KF = 0 + AF = 1 + FC = .5 + BV = 9.9999E+13 + IBV = .001 + ) * .MODEL DLEAK D( + IS = 1.000E-12 + RS = 0 + N = 103 + TT = 0 + CJO = 0 + VJ = 1 + M = .5 + EG = 34.3 + XTI = 309 + KF = 0 + AF = 1 + FC = .5 + BV = 9.9999E+13 + IBV = .001 + ) * .MODEL DFOR D ( + IS = 1.68868E-15 + RS = 0.2636432 + N = 1.0213594 + TT = 2.9023E-7 + CJO = 1.13597E-10 + VJ = 0.6016557 + M = 0.3406627 + EG = 1.11 + XTI = 3 + KF = 0 + AF = 1 + FC = 0.5 + BV = 1E5 + IBV = .001 + ) .ENDS * *** From file FQA36P15.lib * PSpice Model Editor - Version 9.2 * **************** Power Discrete MOSFET Electrical Circuit Model ****************** * Product Name: FQA36P15 * 150V P-Channel MOSFET and TO-3P *--------------------------------------------------------------------------------- .SUBCKT FQA36P15 20 10 30 Rg 10 1 0.04 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-3.6*{-0.00088*TEMP+1.022}} KP={19.5*{-0.00028*TEMP+1.007}} + THETA=0.0424 VMAX=1.5E5 LEVEL=3) Cgs 1 3 2440p Rd 20 4 0.06 TC=0.0085 Dds 4 3 DDS .MODEL DDS D(BV={150*{0.00075*TEMP+0.98125}} M=0.48 CJO=600p VJ=0.61) Dbody 20 3 DBODY .MODEL DBODY D(IS=8.5E-12 N=1.0 RS=0.013 EG=1.19 TT=198n) Ra 4 2 0.0152 TC=0.0085 Rs 3 5 0.0012 Ls 5 30 1n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS (VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 3300p Rcgd 7 4 1E7 Dgd 4 6 DGD Rdgd 4 6 1E7 .MODEL DGD D(M=0.62 CJO=3300p VJ=0.52) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS *-------------------------------------------------------------------------------- * Creation : Nov.-24-2003 * Fairchild Semiconductor * *** From file FQA46N15.lib *FQA46N15 150V N-CHANNEL DMOSFET ELECTRICAL PARAMETERS *------------------------------------------------------------------------------------ .SUBCKT FQA46N15 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={3.62*{-0.00097*TEMP+1.02425}} KP={38.0*{-0.000095*TEMP+1.002375}} + THETA=0.056 VMAX=1.35E5 LEVEL=3) Cgs 1 3 2400p Rd 20 4 15m TC=0.013 Dds 3 4 DDS .MODEL DDS D(BV={150*{0.00896*TEMP+0.776}} M=0.5 CJO=420p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D(IS=9.2E-13 N=1.0 RS=7.8m EG=1.07 TT=130n) Ra 4 2 9.6m TC=0.013 Rs 3 5 0.3m Ls 5 30 0.55n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 5385p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.85 CJO=5385p VJ=0.5) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FQA46N15 *------------------------------------------------------------------------------------ *FAIRCHILD CASE: TO-3P PID: FQA46N15 *MAY-02-2002 CREATION *** From file FQP3P20.lib * FQP3P20 200V P-CHANNEL DMOSFET ELECTRICAL PARAMETERS *------------------------------------------------------------------------------------ .SUBCKT FQP3P20 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS PMOS (VTO={-4.95*{-0.00095*TEMP+1.02375}} KP={1.15*{-0.00075*TEMP+1.01875}} + THETA=0.04 VMAX=2.7E5 LEVEL=3) Cgs 1 3 182.5p Rd 20 4 1350m TC=0.01 Dds 4 3 DDS .MODEL DDS D(BV={200*{0.0008*TEMP+0.98}} M=0.5 CJO=37.5p VJ=0.8) Dbody 20 3 DBODY .MODEL DBODY D(IS=1.2E-14 N=1.07 RS=78.0m EG=1.54 TT=100n) Ra 4 2 412m TC=0.01 Rs 3 5 41.2m Ls 5 30 1.97n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 266p Rcgd 7 4 10meg Dgd 4 6 DGD Rdgd 4 6 10meg .MODEL DGD D(M=0.7 CJO=266p VJ=0.55) M3 7 9 1 1 INTER E3 9 1 4 1 -2 .ENDS FQP3P20 *------------------------------------------------------------------------------------ * FAIRCHILD CASE: TO-220 PID: FQP3P20 * SEP-03-2001 CREATION *** From file FQP3N30.lib * **************** Power Discrete MOSFET Electrical Circuit Model ***************** ** Product Name: FQP3N10 ** 100V N-Channel MOSFET and TO-220 ** Model Type: BSIM3V3 **------------------------------------------------------------------------------- .SUBCKT FQP3N30 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 330 Lgate 1 9 1.125e-9 Ldrain 2 5 1.440e-9 Lsource 3 7 8.431e-10 RLgate 1 9 11.25 RLdrain 2 5 14.4 RLsource 3 7 8.43 Rgate 9 6 0.5 It 7 17 1 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=1.08e-3 TC2=-1.02e-6) .MODEL DbodyMOD D (IS=4.05e-13 N=1 RS=3.62e-2 TRS1=2.05e-3 TRS2=5.0e-7 + CJO=2.45e-10 M=0.51 VJ=0.47 TT=3.02e-7 XTI=3 EG=1.12) .MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1.0e-6) Rdrain 5 16 RdrainMOD 1.65 .MODEL RdrainMOD RES (TC1=7.5e-3 TC2=1.39e-5) M_BSIM3 16 6 7 7 Bsim3 W=0.45 L=2.0e-6 NRS=1 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 + TOX=1480e-10 XJ=1.4e-6 NCH=1.13e17 + U0=700 VSAT=5.0e5 DROUT=1.0 + DELTA=0.10 PSCBE2=0 RSH=5.09e-3 + VTH0=4.30 VOFF=-0.1 NFACTOR=1.1 + LINT=1.05e-7 DLC=1.05e-7 FC=0.5 + CGSO=1.2e-15 CGSL=0 CGDO=8.0e-12 + CGDL=3.91e-10 CJ=0 CF=0 + CKAPPA=0.12 KT1=-1.88 KT2=0 + UA1=-2.2e-9 NJ=10 ) .ENDS *Typ RED GaAs LED: Vf=1.7V Vr=4V If=40mA trr=3uS .MODEL LED1 D (IS=93.2P RS=42M N=3.73 BV=4 IBV=10U + CJO=2.97P VJ=.75 M=.333 TT=4.32U) .model IRF610h VDMOS (Rg=20 Vto=4.30 Kp=0.5 Rs=35m Ksubthres=0.23 Mtriode=0.35 Rd=1 Lambda=3m Bex=-2.4 Vtotc=-6m Tksubthres1=4m Trs1=3.5m Trd1=5m Cgdmax=260p Cgdmin=10p a=0.35 Cgs=125p Cjo=120p m=0.3 VJ=0.75 IS=4n N=1.5 Eg=1.05 Rb=0.06 Trb1=2.5m Vds=200 Ron=1.5 Qg=8nC mfg=VishIH1907) .model IRF9610 vdmos pchan VTO=-3.667 RS=0.47274 KP=0.813 RD=1.733 RG=10 mfg=International_Rectifier Vds=-200 CGDMAX=4.05E-10 CGDMIN=3.00p Cjo=3.06E-11 IS=6.17e-61 Rb=0.267 TT=1.762e-06 Cgs=1.53E-10 Ksubthres=0.1 * This one is definitely wrong, see Vto *.model IRF9610h VDMOS (pchan Rg=6 Vto=+3.76 Kp=0.35 Rs=68m Ksubthres=0.2 Mtriode=0.5 Rd=2 Lambda=4m Bex=-1 Vtotc=+2.5m Tksubthres1=4m Trs1=3m Trd1=9m Cgdmax=120p Cgdmin=15p a=0.26 Cgs=113p Cjo=207p m=0.4 VJ=2.5 IS=1.3f N=4.2 Eg=4.5 Rb=0.02 Trb1=1.3m Vds=-200 Ron=3 Qg=11nC mfg=VishIH1907) * modified .model IRF9610h VDMOS (pchan Rg=6 Vto=-3.76 Kp=0.35 Rs=68m Ksubthres=0.2 Mtriode=0.5 Rd=2 Lambda=4m Bex=-1 Vtotc=+2.5m Tksubthres1=4m Trs1=3m Trd1=9m Cgdmax=120p Cgdmin=15p a=0.26 Cgs=113p Cjo=207p m=0.4 VJ=2.5 IS=1.3f N=4.2 Eg=4.5 Rb=0.02 Trb1=1.3m Vds=-200 Ron=3 Qg=11nC mfg=VishIH1907) .model IRF540 vdmos VTO=3.542 RS=0.03646 KP=35.149 RD=0.0291 RG=6 mfg=International_Rectifier Vds=100 CGDMAX=2.70n CGDMIN=4.00E-11 Cjo=4.76E-10 IS=1.32p Rb=0.01 TT=2.305e-07 Cgs=1.54E-09 Ksubthres=0.1 .model IRF9540 vdmos pchan VTO=-3.192 RS=0.05098 KP=13.966 RD=0.0985 RG=21.486 mfg=International_Rectifier Vds=-100 CGDMAX=2.00n CGDMIN=2.00E-11 Cjo=5.13E-10 IS=2.39e-27 Rb=0.0447 TT=1.465e-07 Cgs=1.27E-09 Ksubthres=0.1