162 lines
28 KiB
C++
162 lines
28 KiB
C++
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/*
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* This program source code file is part of KiCad, a free EDA CAD application.
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*
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* Copyright (C) 2022 Mikolaj Wielgus
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* Copyright (C) 2023 KiCad Developers, see AUTHORS.TXT for contributors.
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*
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* This program is free software; you can redistribute it and/or
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* modify it under the terms of the GNU General Public License
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* as published by the Free Software Foundation; either version 2
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* of the License, or (at your option) any later version.
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*
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* This program is distributed in the hope that it will be useful,
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* but WITHOUT ANY WARRANTY; without even the implied warranty of
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* MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE. See the
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* GNU General Public License for more details.
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*
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* You should have received a copy of the GNU General Public License
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* along with this program; if not, you may find one here:
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* http://www.gnu.org/licenses/old-licenses/gpl-2.0.html
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* or you may search the http://www.gnu.org website for the version 2 license,
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* or you may write to the Free Software Foundation, Inc.,
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* 51 Franklin Street, Fifth Floor, Boston, MA 02110-1301, USA
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*/
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#include <sim/sim_model_ngspice.h>
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void NGSPICE_MODEL_INFO_MAP::addMOS9()
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{
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modelInfos[MODEL_TYPE::MOS9] = { "Mos9", "NMOS", "PMOS", { "D", "G", "S", "B" }, "Modified Level 3 MOSfet model", {}, {} };
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// Model parameters
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "type", 144, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_STRING, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "nmos", "pmos", "N-channel or P-channel MOS" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "nmos", 133, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type MOSfet model" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "pmos", 134, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type MOSfet model" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "n.a." );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "kp", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "2.07189e-05", "2.07189e-05", "Transconductance parameter" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "rd_", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "rs_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cbd_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cbs_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "is_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "pb", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cgso", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cgdo", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cgbo", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-bulk overlap cap." );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "rsh", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sheet resistance" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cj", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bottom junction cap per area" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "mj", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Bottom grading coefficient" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cjsw", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side junction cap per area" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "mjsw", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.33", "0.33", "Side grading coefficient" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "js", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk jct. sat. current density" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "tox", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-07", "1e-07", "Oxide thickness" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "ld", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "xl", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Length mask adjustment" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "wd", 146, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width Narrowing (Diffusion)" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "xw", 147, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width mask adjustment" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "delvto", 148, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Threshold voltage Adjust" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "delvt0", 148, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Threshold voltage Adjust" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "u0", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "cm²/V s", SIM_MODEL::PARAM::CATEGORY::DC, "600", "600", "Surface mobility" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "uo", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "600", "600", "n.a." );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "fc", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias jct. fit parm." );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "nsub", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm³", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Substrate doping" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "tpg", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate type" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "nss", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Surface state density" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "vmax", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Maximum carrier drift velocity" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "xj", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Junction depth" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "nfs", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/cm²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Fast surface state density" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "xd", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Depletion layer width" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "alpha", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Alpha" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "eta", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Vds dependence of threshold voltage" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "delta", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width effect on threshold" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "theta", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Vgs dependence on mobility" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "kappa", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.2", "0.2", "Kappa" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "tnom", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "kf", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise coefficient" );
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modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "af", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise exponent" );
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// Instance parameters
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "m", 80, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Multiplier", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "l", 2, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Length", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "w", 1, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Width", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "ad", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain area", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "as", 3, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m²", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source area", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "pd", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain perimeter", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "ps", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source perimeter", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "id", 34, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cd", 34, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain current", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "ibd", 36, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-D junction current", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "ibs", 35, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "B-S junction current", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "is", 18, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1e-14", "1e-14", "Source current", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "ig", 17, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate current", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "ib", 16, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk current", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "vgs", 50, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "vds", 51, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "vbs", 49, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "vbd", 48, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "nrd", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Drain squares", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "nrs", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Source squares", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "off", 9, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "icvds", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial D-S voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "icvgs", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial G-S voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "icvbs", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial B-S voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "ic", 10, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Vector of D-S, G-S, B-S voltages", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "temp", 77, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::PRINCIPAL, "", "", "Instance operating temperature", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "dtemp", 81, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instance operating temperature difference", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_l", 15, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT length", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_w", 14, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "flag to request sensitivity WRT width", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "dnode", 22, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of drain node", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "gnode", 23, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of gate node", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "snode", 24, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of source node", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "bnode", 25, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of bulk node", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "dnodeprime", 26, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal drain node", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "snodeprime", 27, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Number of internal source node", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "von", 30, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Turn-on voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "vdsat", 31, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Saturation drain voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sourcevcrit", 32, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical source voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "drainvcrit", 33, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Critical drain voltage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "rs", 78, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Source resistance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sourceconductance", 28, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Source conductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "rd", 79, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Drain resistance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "drainconductance", 29, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain conductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "gm", 38, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Transconductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "gds", 39, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Drain-Source conductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "gmb", 37, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "gmbs", 37, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source transconductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "gbd", 40, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain conductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "gbs", 41, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source conductance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cbd", 42, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Drain capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cbs", 43, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Bulk-Source capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cgs", 52, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cgd", 55, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cgb", 58, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cqgs", 54, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-source charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cqgd", 57, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-drain charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cqgb", 60, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to gate-bulk charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cqbd", 62, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-drain charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cqbs", 64, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Capacitance due to bulk-source charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cbd0", 44, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D junction capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cbdsw0", 45, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-D sidewall capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cbs0", 46, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S junction capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "cbssw0", 47, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero-Bias B-S sidewall capacitance", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "qbs", 63, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Source charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "qgs", 53, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Source charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "qgd", 56, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Drain charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "qgb", 59, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Gate-Bulk charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "qbd", 61, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Bulk-Drain charge storage", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "p", 19, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Instantaneous power", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_l_dc", 76, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt length", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_l_real", 70, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt length", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_l_imag", 71, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt length", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_l_cplx", 74, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt length", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_l_mag", 72, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac magnitude", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_l_ph", 73, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt l of ac phase", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_w_dc", 75, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "dc sensitivity wrt width", true );
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||
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_w_real", 65, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "real part of ac sensitivity wrt width", true );
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_w_imag", 66, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "m", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "imag part of ac sensitivity wrt width", true );
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||
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_w_mag", 67, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac magnitude", true );
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||
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_w_ph", 68, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "sensitivity wrt w of ac phase", true );
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||
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modelInfos[MODEL_TYPE::MOS9].instanceParams.emplace_back( "sens_w_cplx", 69, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_COMPLEX, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "ac sensitivity wrt width", true );
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||
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}
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