haskal
/
kicad
1
0
Fork 0
Code Issues Pull Requests Packages Projects Releases Wiki Activity

Added PSPICE/LTSPICE JFET model parameters. 

Fixes https://gitlab.com/kicad/code/kicad/issues/12425
This commit is contained in:
Jeff Young 2023-03-10 20:46:48 +00:00
parent 9546a40662
commit 3bc5e3dd8a
1 changed files with 27 additions and 20 deletions
Show Stats Download Patch File Download Diff File Expand all files Collapse all files

47
eeschema/sim/sim_model_ngspice_data.cpp
View File

@ -789,8 +789,8 @@ struct MODEL_INFO_MAP
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "pjf", 112, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type JFET model" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vt0", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "-2", "-2", "Threshold voltage" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vto", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-2", "-2", "n.a." );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "beta", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "0.0001", "0.0001", "Transconductance parameter" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "lambda", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param." );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "beta", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "0.0001", "0.0001", "Transconductance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "lambda", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "rd", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "gd", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain conductance" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "rs", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
@ -799,19 +799,26 @@ struct MODEL_INFO_MAP
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "cgd", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-D junction cap" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "pb", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "is_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "fc", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parm." );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "fc", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parameter" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "b", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Doping tail parameter" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "parameter measurement temperature" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "tcv", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Threshold voltage temperature coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vtotc", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Threshold voltage temperature coefficient alternative" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Measurement temperature" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "tcv", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Threshold voltage temperature coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vtotc", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V/°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Threshold voltage temperature coefficient alternate" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "bex", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Mobility temperature exponent" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "betatce", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "%/°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Mobility temperature exponent alternative" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "betatce", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "%/°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Mobility temperature exponent alternate" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "xti", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "3", "3", "Gate junction saturation current temperature exponent" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "eg", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1.11", "1.11", "Bandgap voltage" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "kf", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker Noise Coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "af", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker Noise Exponent" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "nlev", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "2", "2", "Noise equation selector" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "gdsnoi", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Channel noise coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "alpha", 401, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Ionization coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "m_", 402, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Gate p-n grading coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "n", 403, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate p-n emission coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "isr", 404, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate p-n recombination current" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "nr", 405, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Gate p-n recombination current emission coefficient" );
modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "vk", 406, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Ionization knee voltage" );
// Instance parameters
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "off", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::JFET].instanceParams.emplace_back( "ic", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial VDS,VGS vector", true );
@ -861,36 +868,36 @@ struct MODEL_INFO_MAP
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfg1", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfg2", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "mvst", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "modulation index for subtreshold current" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "mxi", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "saturation potential modulation parameter" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "fc", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parm." );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "ibd", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Breakdown current of diode jnc" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "mxi", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Saturation potential modulation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "fc", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "ibd", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Breakdown current of diode junction" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "is_", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "kf", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker Noise Coefficient" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lambda", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param." );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfgam", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "drain feedback parameter" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "kf", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise coefficient" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lambda", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfgam", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain feedback coefficient" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfg1", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfg2", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "n", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "gate junction ideality factor" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "n", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction ideality factor" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "p_", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power law (triode region)" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vbi", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "pb", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1", "1", "n.a." );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "q", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power Law (Saturated region)" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "q", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power Law (saturated region)" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "rd", 133, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "rs", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "taud", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Thermal relaxation time" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "taug", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain feedback relaxation time" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vbd", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Breakdown potential of diode jnc" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "ver", 139, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "version number of PS model" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vst", 140, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Crit Poten subthreshold conductn" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vst", 140, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Crit Poten subthreshold conduction" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vt0", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "-2", "-2", "Threshold voltage" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vto", 141, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "-2", "-2", "n.a." );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "xc", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "amount of cap. red at pinch-off" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "xi", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "1000", "1000", "velocity saturation index" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "z", 144, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "rate of velocity saturation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfgam", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "high freq drain feedback parm" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "xi", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "1000", "1000", "Velocity saturation index" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "z", 144, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Rate of velocity saturation" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "hfgam", 145, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "High freq drain feedback" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "gd", 301, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain conductance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "gs", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source conductance" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "tnom", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "parameter measurement temperature" );
modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "tnom", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Measurement temperature" );
// Instance parameters
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "off", 5, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device initially off", true );
modelInfos[MODEL_TYPE::JFET2].instanceParams.emplace_back( "ic", 4, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT_VECTOR, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Initial VDS,VGS vector", true );