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Simulator: Fix diode ibv unit

This commit is contained in:
aris-kimi 2023-03-05 19:23:33 +02:00
parent 6a5f305684
commit 5b43dc4e7b
1 changed files with 1 additions and 1 deletions
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2
eeschema/sim/sim_model_ngspice_data.cpp
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@ -135,7 +135,7 @@ struct MODEL_INFO_MAP
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "fc", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "", "Forward bias junction fit parameter" );
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "fcs", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "", "Forward bias sidewall junction fit parameter" );
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "bv", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "", "Reverse breakdown voltage" );
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "ibv", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.001", "", "Current at reverse breakdown voltage" );
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "ibv", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "A", SIM_MODEL::PARAM::CATEGORY::DC, "0.001", "", "Current at reverse breakdown voltage" );
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "ib", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0.001", "", "n.a." );
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "tcv", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, "V", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "", "Reverse breakdown voltage temperature coefficient" );
modelInfos[MODEL_TYPE::DIODE].modelParams.emplace_back( "cond", 114, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "", "Ohmic conductance" );