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Sim: Fix VDMOS model parsing

This commit is contained in:
Mikolaj Wielgus 2022-11-29 09:47:30 +01:00
parent 21fed9fc8c
commit 8143522371
2 changed files with 9 additions and 4 deletions
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6
eeschema/sim/sim_model_ngspice_data.cpp
View File

@ -1298,9 +1298,9 @@ struct MODEL_INFO_MAP
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "kf", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise coefficient" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "kf", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise coefficient" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "af", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise exponent" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "af", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker noise exponent" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmosn", 111, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::FLAGS, "", "", "N type DMOSfet model" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmosn", 111, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "N type DMOSfet model" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmosp", 112, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::FLAGS, "", "", "P type DMOSfet model" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmosp", 112, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_BOOL, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "P type DMOSfet model" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmos", 117, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "DMOS transistor" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vdmos", 117, SIM_MODEL::PARAM::DIR_IN, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "DMOS transistor" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rq", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Quasi saturation resistance fitting parameter" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rq", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Quasi saturation resistance fitting parameter" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vq", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Quasi saturation voltage fitting parameter" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vq", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Quasi saturation voltage fitting parameter" );
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "mtriode", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Conductance multiplier in triode region" ); modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "mtriode", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Conductance multiplier in triode region" );

7
eeschema/sim/spice_grammar.h
View File

@ -92,7 +92,12 @@ namespace SPICE_GRAMMAR
struct modelName : plus<not_at<garbageOrEolf>, any> {}; struct modelName : plus<not_at<garbageOrEolf>, any> {};
struct dotModelType : plus<alpha> {}; struct dotModelType : sor<// VDMOS models have a special syntax.
seq<TAO_PEGTL_ISTRING( "vdmos" ),
sep,
sor<TAO_PEGTL_ISTRING( "nchan" ),
TAO_PEGTL_ISTRING( "pchan" )>>,
plus<alpha>> {};
struct numparamBracedExpr : seq<one<'{'>, struct numparamBracedExpr : seq<one<'{'>,
star<sor<numparamBracedExpr, star<sor<numparamBracedExpr,