Sim: Remove duplicate parameters
This commit is contained in:
Mikolaj Wielgus
parent
b025b103de
commit
ab6caca384
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@ -224,7 +224,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "subs", 204, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, U(), "", SIM_MODEL::PARAM::CATEGORY::DC, "-1721368256", "-514428616", "Vertical or Lateral device" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "tnom", 151, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "tref", 151, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, R(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "27", "27", "n.a." );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "is", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-16", "1e-16", "Saturation Current" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "is_", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-16", "1e-16", "Saturation Current" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "ibe", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Base-Emitter saturation Current" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "ibc", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Base-Collector saturation Current" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "bf", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "100", "100", "Ideal forward beta" );
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@ -267,7 +267,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "xcjc", 134, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Fraction of B-C cap to internal base" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "tr", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Ideal reverse transit time" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "cjs", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Zero bias Substrate capacitance" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "csub", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, AR(), "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Zero bias Substrate capacitance" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "csub_", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, AR(), "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Zero bias Substrate capacitance" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "ccs", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, AR(), "F", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0", "0", "Zero bias Substrate capacitance" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "vjs", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.75", "0.75", "Substrate junction built in potential" );
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modelInfos[MODEL_TYPE::BJT].modelParams.emplace_back( "ps", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, AR(), "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0.75", "0.75", "Substrate junction built in potential" );
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@ -443,7 +443,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "re", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Intrinsic emitter resistance" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "rs", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Intrinsic substrate resistance" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "rbp", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0.1", "0.1", "Parasitic base resistance" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "is", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-16", "1e-16", "Transport saturation current" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "is_", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-16", "1e-16", "Transport saturation current" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "nf", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Forward emission coefficient" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "nr", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Reverse emission coefficient" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "fc", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0.9", "0.9", "Fwd bias depletion capacitance limit" );
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@ -539,7 +539,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "tvbbe2", 207, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Quadratic temperature coefficient of VBBE" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "tnbbe", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Temperature coefficient of NBBE" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "ebbe", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "exp(-VBBE/(NBBE*Vtv))" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "dtemp", 210, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Locale Temperature difference" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "dtemp_", 210, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Locale Temperature difference" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "vers", 211, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1.2", "1.2", "Revision Version" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "vref", 212, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Reference Version" );
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modelInfos[MODEL_TYPE::VBIC].modelParams.emplace_back( "vbe_max", 213, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::LIMITING_VALUES, "1e+99", "1e+99", "maximum voltage B-E junction" );
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@ -824,7 +824,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "cgs", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-S junction capactance" );
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "cgd", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-D junction cap" );
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "pb", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "is", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "is_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "fc", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parm." );
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "b", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Doping tail parameter" );
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modelInfos[MODEL_TYPE::JFET].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, U(), "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "parameter measurement temperature" );
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@ -890,14 +890,14 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "mxi", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "saturation potential modulation parameter" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "fc", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parm." );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "ibd", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Breakdown current of diode jnc" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "is", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "is_", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Gate junction saturation current" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "kf", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Flicker Noise Coefficient" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lambda", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param." );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfgam", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "drain feedback parameter" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfg1", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "lfg2", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "n", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "gate junction ideality factor" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "p", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power law (triode region)" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "p_", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power law (triode region)" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "vbi", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "pb", 131, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, R(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "1", "1", "n.a." );
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modelInfos[MODEL_TYPE::JFET2].modelParams.emplace_back( "q", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2", "2", "Power Law (Saturated region)" );
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@ -966,9 +966,9 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "rs", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "gs", 302, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, U(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source conductance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "cgs", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-S junction capacitance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "cgd", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-D junction capacitance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "cgd_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-D junction capacitance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "pb", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate junction potential" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "is", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Junction saturation current" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "is_", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Junction saturation current" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "fc", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Forward bias junction fit parm." );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "depl_cap", 303, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0.5", "0.5", "Depletion capacitance" );
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modelInfos[MODEL_TYPE::MES].modelParams.emplace_back( "vcrit", 304, SIM_MODEL::PARAM::DIR_OUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.730289", "0.730289", "Critical voltage" );
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@ -1028,7 +1028,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "tggr", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, R(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "0.033", "0.033", "n.a." );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "n", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Emission coefficient" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "eta", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1.73", "1.73", "Subthreshold ideality factor" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "m", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2.5", "2.5", "Knee shape parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "m_", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2.5", "2.5", "Knee shape parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "mc", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "3", "3", "Knee shape parameter" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "alpha", 149, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
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modelInfos[MODEL_TYPE::MESA].modelParams.emplace_back( "sigma0", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.081", "0.081", "Threshold voltage coefficient" );
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@ -1123,7 +1123,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "ri", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "rf", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "eta", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "Subthreshold ideality factor" );
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "Knee shape parameter" );
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m_", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "Knee shape parameter" );
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "mc", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "Knee shape parameter" );
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "gamma", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "Knee shape parameter" );
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "sigma0", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "Threshold voltage coefficient" );
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@ -1144,7 +1144,7 @@ struct MODEL_INFO_MAP
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modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m1s", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "m2s", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "epsi", 132, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "p", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "p_", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "cm3", 152, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "a1", 135, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
modelInfos[MODEL_TYPE::HFET1].modelParams.emplace_back( "a2", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "" );
|
||||
|
|
@ -1234,12 +1234,12 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "knmax", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "kvto", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "lambda", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Output conductance parameter" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "m", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Knee shape parameter" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "m_", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Knee shape parameter" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "mc", 123, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Knee shape parameter" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "mu", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Moblity" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "n", 125, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "nmax", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "p", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "p_", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "rd", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "rdi", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "", "", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::HFET2].modelParams.emplace_back( "rs", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
|
|
@ -1292,8 +1292,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "phi", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "lambda", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "theta", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Vgs dependence on mobility" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rd", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rs", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rd_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rs_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rg", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tnom", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "Parameter measurement temperature" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "kf", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise coefficient" );
|
||||
|
|
@ -1331,15 +1331,15 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "tt", 136, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Body diode transit time" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "eg", 137, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "deg C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1.11", "1.11", "Body diode activation energy for temperature effect on Is" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "xti", 138, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "3", "3", "Body diode saturation current temperature exponent" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "is", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Body diode saturation current" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "is_", 126, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Body diode saturation current" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "vj", 127, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Body diode junction potential" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cjo", 128, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Zero-bias body diode junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "m", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Body diode grading coefficient" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "m_", 129, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Body diode grading coefficient" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "fc", 130, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Body diode coefficient for forward-bias depletion capacitance formula" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cgdmin", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Minimum non-linear G-D capacitance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cgdmax", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Maximum non-linear G-D capacitance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "a", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Non-linear Cgd capacitance parameter" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cgs", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source capacitance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cgs_", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source capacitance" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rthjc", 142, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1", "1", "Self-heating thermal resistance, junction-to-case" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "rthca", 143, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "1000", "1000", "Self-heating thermal resistance, case-to-ambient" );
|
||||
modelInfos[MODEL_TYPE::VDMOS].modelParams.emplace_back( "cthj", 144, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "1e-05", "1e-05", "Self-heating thermal capacitance" );
|
||||
|
|
@ -1402,11 +1402,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "lambda", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "rd", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "rs", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cbd", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cbs", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "is", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "rd_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "rs_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cbd_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cbs_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "is_", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "pb", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cgso", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
|
||||
modelInfos[MODEL_TYPE::MOS1].modelParams.emplace_back( "cgdo", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
|
||||
|
|
@ -1518,11 +1518,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "lambda", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "rd", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "rs", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cbd", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cbs", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "is", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "rd_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "rs_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cbd_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cbs_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "is_", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "pb", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cgso", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Gate-source overlap cap." );
|
||||
modelInfos[MODEL_TYPE::MOS2].modelParams.emplace_back( "cgdo", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Gate-drain overlap cap." );
|
||||
|
|
@ -1642,11 +1642,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "kp", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "2.07189e-05", "2.07189e-05", "Transconductance parameter" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "rd", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "rs", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cbd", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cbs", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "is", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "rd_", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "rs_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cbd_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cbs_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "is_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "pb", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cgso", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
|
||||
modelInfos[MODEL_TYPE::MOS3].modelParams.emplace_back( "cgdo", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
|
||||
|
|
@ -2032,7 +2032,7 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "kc", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "5e-05", "5e-05", "Saturation current factor" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nc", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Saturation current coeff." );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "nvth", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Threshold voltage coeff." );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "ps", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sat. current modification par." );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "ps_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Sat. current modification par." );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "gamma", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "gamma1", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter 1" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "sigma", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "static const feedback effect par." );
|
||||
|
|
@ -2040,11 +2040,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param." );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda0", 113, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param. 0" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "lambda1", 114, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "1/V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Channel length modulation param. 1" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rd", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rs", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbd", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbs", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "is", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rd_", 115, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "rs_", 116, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbd_", 117, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cbs_", 118, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "is_", 119, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "pb", 120, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgso", 121, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
|
||||
modelInfos[MODEL_TYPE::MOS6].modelParams.emplace_back( "cgdo", 122, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
|
||||
|
|
@ -2152,8 +2152,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "capmod", 100, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "3", "3", "Capacitance model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "mobmod", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Mobility model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "noimod", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Noise model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "nqsmod", 210, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Non-quasi-static const model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "acnqsmod", 211, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "AC NQS model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "nqsmod_", 210, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Non-quasi-static const model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "acnqsmod_", 211, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "AC NQS model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "acm", 101, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Area calculation method selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "calcacm", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Area calculation method ACM=12" );
|
||||
modelInfos[MODEL_TYPE::BSIM3].modelParams.emplace_back( "paramchk", 192, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Model parameter checking selector" );
|
||||
|
|
@ -2637,11 +2637,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "kp", 102, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/V²", SIM_MODEL::PARAM::CATEGORY::DC, "2.07189e-05", "2.07189e-05", "Transconductance parameter" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "gamma", 103, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "sqrt V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bulk threshold parameter" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "phi", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "Surface potential" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "rd", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "rs", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cbd", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cbs", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "is", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "rd_", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drain ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "rs_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Source ohmic resistance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cbd_", 107, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-D junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cbs_", 108, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "B-S junction capacitance" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "is_", 109, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1e-14", "1e-14", "Bulk junction sat. current" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "pb", 110, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.8", "0.8", "Bulk junction potential" );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cgso", 111, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-source overlap cap." );
|
||||
modelInfos[MODEL_TYPE::MOS9].modelParams.emplace_back( "cgdo", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, A(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate-drain overlap cap." );
|
||||
|
|
@ -2874,8 +2874,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "tsi", 196, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-07", "1e-07", "Silicon-on-insulator thickness in meters" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "etsi", 96, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-07", "1e-07", "Effective Silicon-on-insulator thickness in meters" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "xj", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "NaN", "NaN", "Junction Depth" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rth0", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "cth0", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1e-05", "1e-05", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rth0_", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "cth0_", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1e-05", "1e-05", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "cfrcoeff", 394, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Fringe Cap parameter" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "egidl", 215, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1.2", "1.2", "GIDL first parameter" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "agidl", 216, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "GIDL second parameter" );
|
||||
|
|
@ -2970,11 +2970,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "steta0", 984, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "eta0 shift factor related to stress effect on vth" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "lodeta0", 985, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "eta0 shift modification factor for stress effect" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "gbmin", 986, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1e-12", "1e-12", "Minimum body conductance" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rbdb", 987, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "Resistance between bNode and dbNode" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rbsb", 988, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "Resistance between bNode and sbNode" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rbdb_", 987, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "Resistance between bNode and dbNode" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rbsb_", 988, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "Resistance between bNode and sbNode" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "bf", 597, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "2", "2", "Flicker noise length dependence exponent" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "w0flk", 598, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::NOISE, "1e-05", "1e-05", "Flicker noise width dependence" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "frbody", 599, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Layout dependent rbody multiplier" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "frbody_", 599, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Layout dependent rbody multiplier" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "dvtp0", 608, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "First parameter for Vth shift due to pocket" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "ldvtp0", 609, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Length dependence of dvtp0" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "wdvtp0", 610, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Width dependence of dvtp0" );
|
||||
|
|
@ -3121,7 +3121,7 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "pigcd", 1028, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Parameter for Igc partition" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "poxedge", 1029, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Factor for the gate edge Tox" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "dlcig", 1030, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Delta L for Ig model" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "soimod", 1001, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "model selector for SOI technology" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "soimod_", 1001, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "model selector for SOI technology" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "vbs0pd", 963, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Upper bound of built-in potential lowering for PD operation" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "vbs0fd", 964, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0.5", "0.5", "Lower bound of built-in potential lowering for FD operation" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "vbsa", 1002, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Vbs0t offset voltage" );
|
||||
|
|
@ -3133,14 +3133,14 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "dvbd0", 1008, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "first short-channel effect parameter in FD module" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "dvbd1", 1009, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "second short-channel effect parameter in FD module" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "moinfd", 1010, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "1000", "1000", "Coefficient for the gate-bias dependent surface potential in FD" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rgatemod", 295, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate R model selector" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rgatemod_", 295, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate R model selector" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "xrcrg1", 296, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "12", "12", "First fitting parameter the bias-dependent Rg" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "xrcrg2", 297, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Second fitting parameter the bias-dependent Rg" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rshg", 298, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0.1", "0.1", "Gate sheet resistance" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "ngcon", 299, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Number of gate contacts" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "xgw", 392, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distance from gate contact center to device edge" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "xgl", 393, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Variation in Ldrawn" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rbodymod", 300, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Body R model selector" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rbodymod_", 300, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Body R model selector" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "rdsmod", 104, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bias-dependent S/D resistance model selector" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "fdmod", 1221, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Improved dVbi model selector" );
|
||||
modelInfos[MODEL_TYPE::B4SOI].modelParams.emplace_back( "vsce", 1222, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "SCE parameter for improved dVbi model" );
|
||||
|
|
@ -3761,14 +3761,14 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "capmod", 92, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "2", "2", "Capacitance model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "diomod", 86, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Diode IV model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rdsmod", 85, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Bias-dependent S/D resistance model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "trnqsmod", 93, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Transient NQS model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "acnqsmod", 83, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "AC NQS model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "trnqsmod_", 93, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Transient NQS model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "acnqsmod_", 83, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "AC NQS model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "mobmod", 94, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Mobility model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rbodymod", 91, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distributed body R model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rgatemod", 90, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate R model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rbodymod_", 91, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distributed body R model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rgatemod_", 90, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Gate R model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "permod", 87, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Pd and Ps model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "geomod", 88, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Geometry dependent parasitics model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rgeomod", 89, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "S/D resistance and contact model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "geomod_", 88, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Geometry dependent parasitics model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rgeomod_", 89, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "S/D resistance and contact model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "fnoimod", 84, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "1", "1", "Flicker noise model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "tnoimod", 95, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Thermal noise model selector" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "mtrlmod", 80, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "parameter for non-silicon substrate or metal gate selector" );
|
||||
|
|
@ -3943,10 +3943,10 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "dmci", 216, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distance of Mid-Contact to Isolation" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "dmdg", 217, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distance of Mid-Diffusion to Gate edge" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "dmcgt", 258, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distance of Mid-Contact to Gate edge in Test structures" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "xgw", 218, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distance from gate contact center to device edge" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "xgw_", 218, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Distance from gate contact center to device edge" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "xgl", 219, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Variation in Ldrawn" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "rshg", 220, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω/m", SIM_MODEL::PARAM::CATEGORY::DC, "0.1", "0.1", "Gate sheet resistance" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "ngcon", 221, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Number of gate contacts" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "ngcon_", 221, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Number of gate contacts" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "xrcrg1", 232, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "12", "12", "First fitting parameter the bias-dependent Rg" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "xrcrg2", 233, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Second fitting parameter the bias-dependent Rg" );
|
||||
modelInfos[MODEL_TYPE::BSIM4].modelParams.emplace_back( "lambda", 282, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m/s", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Velocity overshoot parameter" );
|
||||
|
|
@ -4669,11 +4669,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "nrd", 8, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Number of squares in drain", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "nrs", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::GEOMETRY, "", "", "Number of squares in source", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "off", 9, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_BOOL, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Device is initially off", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbdb", 23, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbsb", 24, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbpb", 25, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbps", 26, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbpd", 27, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbdb_", 23, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbsb_", 24, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbpb_", 25, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbps_", 26, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "rbpd_", 27, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "50", "50", "Body resistance", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "delvto", 31, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Zero bias threshold voltage variation", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "delvt0", 31, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, R(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "n.a.", true );
|
||||
modelInfos[MODEL_TYPE::BSIM4].instanceParams.emplace_back( "mulu0", 39, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::SUPERFLUOUS, "", "", "Low field mobility multiplier", true );
|
||||
|
|
@ -4826,8 +4826,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "adice0", 205, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "DICE constant for bulk charge effect" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "abp", 206, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate bias coefficient for Xcsat calculation" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "mxc", 207, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "-0.9", "-0.9", "A smoothing parameter for Xcsat calculation" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "rth0", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "cth0", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "rth0_", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "cth0_", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "aii", 210, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "1st Vdsatii parameter" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "bii", 211, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "2nd Vdsatii parameter" );
|
||||
modelInfos[MODEL_TYPE::B3SOIFD].modelParams.emplace_back( "cii", 212, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "3rd Vdsatii parameter" );
|
||||
|
|
@ -5251,8 +5251,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "adice0", 205, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "DICE constant for bulk charge effect" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "abp", 206, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Gate bias coefficient for Xcsat calculation" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "mxc", 207, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "-0.9", "-0.9", "A smoothing parameter for Xcsat calculation" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "rth0", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "cth0", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "rth0_", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "cth0_", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "aii", 210, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "1st Vdsatii parameter" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "bii", 211, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "2nd Vdsatii parameter" );
|
||||
modelInfos[MODEL_TYPE::B3SOIDD].modelParams.emplace_back( "cii", 212, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "3rd Vdsatii parameter" );
|
||||
|
|
@ -5666,8 +5666,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "tbox", 195, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "3e-07", "3e-07", "Back gate oxide thickness in meters" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "tsi", 196, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-07", "1e-07", "Silicon-on-insulator thickness in meters" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "xj", 112, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "NaN", "NaN", "Junction Depth" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "rth0", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "cth0", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "rth0_", 208, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "Ω", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Self-heating thermal resistance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "cth0_", 209, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "Self-heating thermal capacitance" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "ngidl", 215, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1.2", "1.2", "GIDL first parameter" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "agidl", 216, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "GIDL second parameter" );
|
||||
modelInfos[MODEL_TYPE::B3SOIPD].modelParams.emplace_back( "bgidl", 217, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "GIDL third parameter" );
|
||||
|
|
@ -6104,7 +6104,7 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "version", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "280", "280", "model version 280" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "show", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "show physical value" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "corsrd", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "solve equations accounting Rs and Rd." );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "corg", 32, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "solve equations accounting Rg." );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "corg_", 32, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "solve equations accounting Rg." );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "coiprv", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "use ids_prv as initial guess of Ids (internal flag)" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "copprv", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "use ps{0/l}_prv as initial guess of Ps{0/l} (internal flag)" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "coadov", 17, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "add overlap to intrisic" );
|
||||
|
|
@ -6227,9 +6227,9 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "npext", 242, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "5e+17", "5e+17", "Pocket extension" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "npextw", 471, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "new model parameter NPEXTW" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "npextwp", 472, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "new model parameter NPEXTWP" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "cgso", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-S overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "cgdo", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-D overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "cgbo", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-B overlap capacitance per unit L [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "cgso_", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-S overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "cgdo_", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-D overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "cgbo_", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::CAPACITANCE, "0", "0", "G-B overlap capacitance per unit L [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "tpoly", 179, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2e-07", "2e-07", "hight of poly gate [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "js0", 157, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "5e-07", "5e-07", "Saturation current density [A/m^2]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "js0sw", 158, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/m²", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side wall saturation current density [A/m]" );
|
||||
|
|
@ -6308,7 +6308,7 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "tnom", 124, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "°C", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "27", "27", "nominal temperature [K]" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "ibpc1", 404, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "parameter for Impact-Ionization Induced Bulk Potential Change" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "ibpc2", 405, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "parameter for Impact-Ionization Induced Bulk Potential Change" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "mphdfm", 409, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "-0.3", "-0.3", "NSUBCDFM dependence of phonon scattering for DFM" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "mphdfm_", 409, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "-0.3", "-0.3", "NSUBCDFM dependence of phonon scattering for DFM" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "web", 88, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Description for the model parameter WPE web" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "wec", 89, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Description for the model parameter WPE wec" );
|
||||
modelInfos[MODEL_TYPE::HISIM2].modelParams.emplace_back( "nsubcwpe", 91, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Description for the model parameter WPE nsubcwpe" );
|
||||
|
|
@ -6657,7 +6657,7 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "version", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_STRING, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1.24", "1.24", "Model version" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "show", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Show physical value" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "corsrd", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "3", "3", "Handling of Rs and Rd" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "corg", 32, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Activate gate resistance (1) or not (0)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "corg_", 32, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Activate gate resistance (1) or not (0)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coiprv", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Use ids_prv as initial guess of Ids (internal flag)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "copprv", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Use ps{0/l}_prv as initial guess of Ps{0/l} (internal flag)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coadov", 17, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Add overlap to intrisic" );
|
||||
|
|
@ -6669,13 +6669,13 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coflick", 25, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Calculate 1/f noise" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coisti", 26, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculate STI" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "conqs", 29, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculate in nqs mode or qs mode" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "corbnet", 33, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "corbnet_", 33, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cothrml", 30, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Calculate thermal noise" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coign", 31, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Calculate induced gate noise" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "codfm", 36, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculation of model for DFM" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coqovsm", 34, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "select smoothing method of Qover" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coselfheat", 35, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculation of self heating model" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cosubnode", 48, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Switch tempNode to subNode" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coselfheat_", 35, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculation of self heating model" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cosubnode_", 48, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Switch tempNode to subNode" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cosym", 37, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Model selector for symmetry device" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cotemp", 38, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Model flag for temperature dependence" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "coldrift", 39, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "selector for Ldrift parameter" );
|
||||
|
|
@ -6690,8 +6690,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "xld", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion of S/D under the gate [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "xldld", 439, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Lateral diffusion of Drain under the gate [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "xwdld", 494, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "lover", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Overlap length on source side [m], alias for lovers" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "lovers", 385, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "3e-08", "3e-08", "Overlap length on source side [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "lover_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Overlap length on source side [m], alias for lovers" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "lovers_", 385, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "3e-08", "3e-08", "Overlap length on source side [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rdov11", 313, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Dependence coeff. for overlap length" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rdov12", 314, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Dependence coeff. for overlap length" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rdov13", 476, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Dependence coeff. for overlap length" );
|
||||
|
|
@ -6699,13 +6699,13 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rdict1", 316, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "LDRIFT1 dependence of resistance for CORSRD=1,3" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rdslp2", 317, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "LDRIFT2 dependence of resistance for CORSRD=1,3" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rdict2", 318, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "LDRIFT2 dependence of resistance for CORSRD=1,3" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "loverld", 436, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Overlap length on the drain side" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift1", 319, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-1 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift2", 320, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift1s", 324, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drift region length-1 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift2s", 325, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "subld1", 321, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [-]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "subld2", 322, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [m^{-1}*V^{3/2}]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "loverld_", 436, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Overlap length on the drain side" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift1_", 319, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-1 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift2_", 320, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift1s_", 324, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drift region length-1 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ldrift2s_", 325, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "subld1_", 321, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [-]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "subld2_", 322, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [m^{-1}*V^{3/2}]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ddltmax", 421, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "10", "10", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ddltslp", 422, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ddltict", 423, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "10", "10", "" );
|
||||
|
|
@ -6826,9 +6826,9 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "scp21", 244, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "bs1", 245, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "bs2", 246, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.9", "0.9", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cgso", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-S overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cgdo", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-D overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cgbo", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-B overlap capacitance per unit L [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cgso_", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-S overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cgdo_", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-D overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "cgbo_", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-B overlap capacitance per unit L [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "tpoly", 179, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2e-07", "2e-07", "Height of poly gate on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "js0", 157, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/m^2", SIM_MODEL::PARAM::CATEGORY::DC, "5e-07", "5e-07", "Saturation current density [A/m^2]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "js0sw", 158, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/m^2", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side wall saturation current density [A/m]" );
|
||||
|
|
@ -6905,11 +6905,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ovslp", 261, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2.1e-07", "2.1e-07", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ovmag", 262, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "gbmin", 394, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1e-12", "1e-12", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbpb", 389, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbpd", 390, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbps", 391, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbdb", 392, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbsb", 393, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbpb_", 389, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbpd_", 390, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbps_", 391, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbdb_", 392, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "rbsb_", 393, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ibpc1", 404, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Parameter for impact-ionization induced bulk potential change" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "ibpc2", 405, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Parameter for impact-ionization induced bulk potential change" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV1].modelParams.emplace_back( "mphdfm", 409, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "-0.3", "-0.3", "NSUBCDFM dependence of phonon scattering for DFM" );
|
||||
|
|
@ -7344,7 +7344,7 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "version", 6, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_STRING, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2.2.0", "2.2.0", "Model version" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "show", 7, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Show physical value" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "corsrd", 11, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Handling of Rs and Rd" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "corg", 32, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Activate gate resistance (1) or not (0)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "corg_", 32, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Activate gate resistance (1) or not (0)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coiprv", 12, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Use ids_prv as initial guess of Ids (internal flag)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "copprv", 13, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Use ps{0/l}_prv as initial guess of Ps{0/l} (internal flag)" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coadov", 17, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Add overlap to intrisic" );
|
||||
|
|
@ -7356,13 +7356,13 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coflick", 25, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Calculate 1/f noise" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coisti", 26, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculate STI" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "conqs", 29, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculate in nqs mode or qs mode" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "corbnet", 33, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "corbnet_", 33, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cothrml", 30, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Calculate thermal noise" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coign", 31, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::NOISE, "0", "0", "Calculate induced gate noise" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "codfm", 36, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculation of model for DFM" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coqovsm", 34, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "select smoothing method of Qover" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coselfheat", 35, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculation of self heating model" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cosubnode", 48, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Switch tempNode to subNode" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coselfheat_", 35, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Calculation of self heating model" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cosubnode_", 48, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Switch tempNode to subNode" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cosym", 37, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Model selector for symmetry device" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cotemp", 38, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::TEMPERATURE, "0", "0", "Model flag for temperature dependence" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "coldrift", 39, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_INT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "selector for Ldrift parameter" );
|
||||
|
|
@ -7381,8 +7381,8 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "xld", 105, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Lateral diffusion of S/D under the gate [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "xldld", 439, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Lateral diffusion of Drain under the gate [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "xwdld", 494, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "lover", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "3e-08", "3e-08", "Overlap length on source side [m], alias for lovers" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "lovers", 385, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "3e-08", "3e-08", "Overlap length on source side [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "lover_", 106, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "3e-08", "3e-08", "Overlap length on source side [m], alias for lovers" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "lovers_", 385, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "3e-08", "3e-08", "Overlap length on source side [m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rdov11", 313, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Dependence coeff. for overlap length" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rdov12", 314, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Dependence coeff. for overlap length" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rdov13", 476, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Dependence coeff. for overlap length" );
|
||||
|
|
@ -7390,15 +7390,15 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rdict1", 316, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "LDRIFT1 dependence of resistance for CORSRD=1,3" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rdslp2", 317, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "LDRIFT2 dependence of resistance for CORSRD=1,3" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rdict2", 318, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "ohm", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "LDRIFT2 dependence of resistance for CORSRD=1,3" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "loverld", 436, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Overlap length on the drain side" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift1", 319, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-1 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift2", 320, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift1s", 324, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drift region length-1 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift2s", 325, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "subld1", 321, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [-]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "loverld_", 436, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Overlap length on the drain side" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift1_", 319, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-1 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift2_", 320, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the drain side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift1s_", 324, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Drift region length-1 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ldrift2s_", 325, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "m", SIM_MODEL::PARAM::CATEGORY::DC, "1e-06", "1e-06", "Drift region length-2 on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "subld1_", 321, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [-]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "subld1l", 329, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [um^{subld1lp}]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "subld1lp", 330, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "1", "1", "Impact-ionization current in the drift region [-]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "subld2", 322, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [m^{-1}*V^{3/2}]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "subld2_", 322, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [m^{-1}*V^{3/2}]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "xpdv", 326, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [m^{-1}]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "xpvdth", 327, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [V]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "xpvdthg", 328, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Impact-ionization current in the drift region [V^{-1}]" );
|
||||
|
|
@ -7521,9 +7521,9 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "scp21", 244, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "bs1", 245, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "bs2", 246, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.9", "0.9", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cgso", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-S overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cgdo", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-D overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cgbo", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-B overlap capacitance per unit L [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cgso_", 154, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-S overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cgdo_", 155, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-D overlap capacitance per unit W [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "cgbo_", 156, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "F/m", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "G-B overlap capacitance per unit L [F/m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "tpoly", 179, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2e-07", "2e-07", "Height of poly gate on the source side[m]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "js0", 157, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/m^2", SIM_MODEL::PARAM::CATEGORY::DC, "5e-07", "5e-07", "Saturation current density [A/m^2]" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "js0sw", 158, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "A/m^2", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Side wall saturation current density [A/m]" );
|
||||
|
|
@ -7599,11 +7599,11 @@ struct MODEL_INFO_MAP
|
|||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ovslp", 261, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "2.1e-07", "2.1e-07", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ovmag", 262, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "0.6", "0.6", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "gbmin", 394, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "1e-12", "1e-12", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbpb", 389, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbpd", 390, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbps", 391, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbdb", 392, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbsb", 393, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbpb_", 389, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbpd_", 390, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbps_", 391, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbdb_", 392, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "rbsb_", 393, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "", SIM_MODEL::PARAM::CATEGORY::DC, "50", "50", "" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ibpc1", 404, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Parameter for impact-ionization induced bulk potential change" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ibpc1l", 331, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "0", "0", "Parameter for impact-ionization induced bulk potential change" );
|
||||
modelInfos[MODEL_TYPE::HISIMHV2].modelParams.emplace_back( "ibpc1lp", 332, SIM_MODEL::PARAM::DIR_INOUT, SIM_VALUE::TYPE_FLOAT, SIM_MODEL::PARAM::FLAGS(), "V", SIM_MODEL::PARAM::CATEGORY::DC, "-1", "-1", "Parameter for impact-ionization induced bulk potential change" );
|
||||
|
|
|
|||
Loading…
Reference in New Issue