43 lines
1.5 KiB
Plaintext
43 lines
1.5 KiB
Plaintext
|
* SPICE model NPN bipolar transistor ***BC337-25***
|
||
|
* Use the symbol file ***bc337-25.asy***
|
||
|
*
|
||
|
* (c) Diotec Semiconductor AG
|
||
|
* www.diotec.com
|
||
|
* 2017-12-13
|
||
|
*
|
||
|
*********************************************************
|
||
|
* This model is for simulation purposes only. It does *
|
||
|
* not replace reviewing of the data sheet nor real life *
|
||
|
* testing of the part inside the application. *
|
||
|
*********************************************************
|
||
|
*
|
||
|
.subckt BC337-25 C B E params: Vceo=45 Vcbo=50 Vebo=5 Ic=800m hfe=400 Ices=2n Vbe=1200m ft=100Meg Ccbo=3.5p Cebo=9p Rc=1 Rb=.1 Re=.1 Eg=1.11 Xti=3
|
||
|
|
||
|
* Above values are an example for the ***BC337-25***. Using the
|
||
|
* above symbol file allows for direct insertion of other values
|
||
|
* according to these data sheet parameters:
|
||
|
*
|
||
|
* Vceo Collector Emitter voltage, Base open
|
||
|
* Vcbo Collector Base voltage, Emitter open
|
||
|
* Vebo Emitter Base voltage, Collector open
|
||
|
* Ic DC Collector current
|
||
|
* hfe Max DC current gain
|
||
|
* Ices Collector Emitter cut-off current
|
||
|
* Vbe Min Base Emitter voltage
|
||
|
* ft Gain bandwidth product
|
||
|
* Ccbo Typ. Collector Base capacitance
|
||
|
* Cebo Typ. Emitter Base capacitance
|
||
|
* Rc/Rb/Re Fixed values
|
||
|
*
|
||
|
* Activation energy: Eg=1.11 for Si (npn) transistor
|
||
|
* Sat.-current temp. exp: Xti=3 for Si (npn) transistor
|
||
|
|
||
|
* Added for ngspice compatibility:
|
||
|
.param pi=3.14159
|
||
|
|
||
|
Q C B E Transistor
|
||
|
|
||
|
.model Transistor NPN(Is={Ices/2} Bf={hfe} Bvcbo={Vcbo} Bvbe={-Vebo} Vceo={Vceo} Vje={Vbe} Tf={1/(2*pi*ft)} Eg={Eg} Xti={Xti} Icrating={Ic} Cjc={Ccbo*2} Cje={Cebo*2} Rc={Rc} Rb={Rb} Re={Re} mfg=Diotec type=npn)
|
||
|
|
||
|
.ends
|