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Added flash erase function for Atmel SAM3X.

This commit is contained in:
Gareth McMullin 2012-06-23 21:13:08 +12:00
parent c09cbe8719
commit cb19164f2f
1 changed files with 24 additions and 8 deletions
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32
src/sam3x.c
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@ -163,12 +163,28 @@ sam3x_flash_bank(struct target_s *target, uint32_t addr, uint32_t *offset)
static int sam3x_flash_erase(struct target_s *target, uint32_t addr, int len)
{
/* FIXME: This device can't do sector erase. What do we do here?
* Sector erase is done as part of write cycle in sam3x_flash_write()
uint32_t offset;
uint8_t bank = sam3x_flash_bank(target, addr, &offset);
unsigned chunk = offset / PAGE_SIZE;
uint8_t buf[PAGE_SIZE];
/* This device doesn't really have a page erase function.
* This Erase/Write page is the best we have, so we write with all
* ones. This does waste time, but what can we do?
*/
(void)target;
(void)addr;
(void)len;
memset(buf, 0xff, sizeof(buf));
/* Only do this once, since it doesn't change. */
target_mem_write_words(target, addr, (void*)buf, PAGE_SIZE);
while (len) {
if(sam3x_flash_cmd(target, bank, EEFC_FCR_FCMD_EWP, chunk))
return -1;
len -= PAGE_SIZE;
addr += PAGE_SIZE;
chunk++;
}
return 0;
}
@ -178,7 +194,7 @@ static int sam3x_flash_write(struct target_s *target, uint32_t dest,
{
uint32_t offset;
uint8_t bank = sam3x_flash_bank(target, dest, &offset);
uint32_t buf[PAGE_SIZE];
uint8_t buf[PAGE_SIZE];
unsigned first_chunk = offset / PAGE_SIZE;
unsigned last_chunk = (offset + len - 1) / PAGE_SIZE;
offset %= PAGE_SIZE;
@ -211,8 +227,8 @@ static int sam3x_flash_write(struct target_s *target, uint32_t dest,
src += PAGE_SIZE;
}
target_mem_write_words(target, dest, buf, PAGE_SIZE);
if(sam3x_flash_cmd(target, bank, EEFC_FCR_FCMD_EWP, chunk))
target_mem_write_words(target, dest, (void*)buf, PAGE_SIZE);
if(sam3x_flash_cmd(target, bank, EEFC_FCR_FCMD_WP, chunk))
return -1;
}